Applicability of charge pumping on germanium MOSFETs

IEEE Electron Device Letters

Volumn 29, Issue 12, 2008, Pages 1364-1366

  Martens, Koen ^a,b   Kaczer, B ^a   Grasser, T ^a   De Jaeger, B ^a   Meuris, M ^a   Maes, H E ^a,b   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Charge pumping (CP); Electrical characterization; Ge MOSFET; Interface state density extraction

Indexed keywords

MOSFET DEVICES; TEMPERATURE MEASUREMENT;

BAND EDGES; BANDGAP; CHARGE PUMPING; CHARGE PUMPING (CP); CP MEASUREMENTS; CP METHODS; ELECTRICAL CHARACTERIZATION; FAST MEASUREMENTS; GE MOSFET; INTERFACE STATE DENSITY EXTRACTION; INTERFACE STATES; MOS FETS; RF STRUCTURES; ROOM TEMPERATURES; SET-UPS; TOTAL DENSITIES; TRANSITION TIMES; TRAP DENSITIES;

GERMANIUM;

EID: 57149087134     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2007582     Document Type: Article

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