AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2080-2083

  Jmerik, V N ^a   Shubina, T V ^a   Mizerov, A M ^a   Belyaev, K G ^a   Sakharov, A V ^a   Zamoryanskaya, M V ^a   Sitnikova, A A ^a   Davydov, V Yu ^a   Kop'ev, P S ^a   Lutsenko, E V ^b   Rzheutskii, N V ^b   Danilchik, A V ^b   Yablonskii, G P ^b   Ivanov, S V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

ALLOYING; ALUMINUM; CORUNDUM; CRYSTAL GROWTH; CURRENT DENSITY; DIODES; LIGHT; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; PLASMAS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

A3. MOLECULAR BEAM EPITAXY; AL-RICH ALGAN; ALGAN; ALGAN QUANTUM WELLS; ALLOYING TECHNIQUES; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; B3. LIGHT-EMITTING DIODES; BAND-GAP ENERGIES; BOWING PARAMETERS; C SAPPHIRES; COMPOSITIONAL DEPENDENCES; DEEP-UV; ELECTRON-PROBE MICROANALYSIS; OPTICAL TRANSMISSION SPECTROSCOPIES; PLASMA-ASSISTED MBE; PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIES; QUANTUM WELLS; ROOM TEMPERATURES; SPECTRAL RANGES; STRUCTURAL QUALITIES;

LIGHT EMITTING DIODES;

EID: 63349094060     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.080     Document Type: Article

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