Comprehensive study of thermal stability performance of metamorphic heterostructure field-effect transistors with TiAu and Au metal gates

Journal of the Electrochemical Society

Volumn 154, Issue 3, 2007, Pages

  Lai, Po Hsien ^a   Liu, Rong Chau ^b   Fu, Ssu I ^a   Tsai, Yan Ying ^a   Hung, Ching Wen ^a   Chen, Tzu Pin ^a   Chen, Chun Wei ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC BREAKDOWN; GOLD; HETEROJUNCTIONS; LOW TEMPERATURE EFFECTS; THERMODYNAMIC STABILITY; TITANIUM COMPOUNDS;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; LOWER TEMPERATURE DEGRADATION; METAL GATES; TRANSITION REGION;

FIELD EFFECT TRANSISTORS;

EID: 33846986854     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2430649     Document Type: Article

References (19)

1. K. W. Lee, N. Y. Yang, M. P. Houng, Y. H. Wang, and P. W. Sze, Appl. Phys. Lett., 87, 263501 (2005).
2. M. K. Hsu, H. R. Chen, S. Y. Chiou, W. T. Chen, G. H. Chen, Y. C. Chang, and W. S. Lour, Appl. Phys. Lett., 89, 033509 (2006).
3. J. S. Su, W. C. Hsu, D. T. Lin, W. Lin, H. P. Shaio, Y. S. Lin, J. Z. Huang, and P. J. Chou, IEEE Electron Device Lett., 32, 2095 (1996).
4. Y. S. Lin and J. H. Huang, J. Electrochem. Soc., 152, G627 (2005).
5. M. H. Somerville, A. Ernst, and J. A. Del Alamo, IEEE Trans. Electron Devices, 47, 922 (2000).
6. S. M. Sze, Semiconductor Devices: Physics and Technology, 2nd ed., pp. 75-81, John Wiley & Sons, New York (1985).
7. C. W. Chen, P. H. Lai, W. S. Lour, D. F. Guo, J. H. Tsai, and W. C. Liu, Semicond. Sci. Technol., 21, 1358 (2006).
8. D. J. Coleman, Jr., W. R. Wisseman, and D. W. Shaw, Appl. Phys. Lett., 24, 355 (1974).
9. W. S. Lour and C. Y. Lia, Semicond. Sci. Technol., 13, 796 (1998).
10. O. Wada, S. Yanagisawa, and H. Takanashi, Appl. Phys. Lett., 29, 263 (1976).
11. T. Ytterdal, B. J. Moon, T. A. Fjeldly, and M. S. Shur, IEEE Trans. Electron Devices, 42, 1724 (1995).
12. C. S. Lee, Y. J. Chen, W. C. Hsu, K. H. Su, J. C. Huang, D. H. Huang, and C. L. Wu, Appl. Phys. Lett., 88, 223506 (2006).
13. K. G. Gopalan, Introduction to Digital Microelectronic Circuits, pp. 8-18, Irwin (1996).
14. J. L. Wright, M. W. Marks, and K. D. Decker, in IEEE Seventh Semi-Therm Symposium, 110 (1991).
15. A. K. Sinha and J. M. Poate, Appl. Phys. Lett., 23, 666 (1973).
16. R. T. Webster, W. Shangli, and A. F. M. Anwar, IEEE Electron Device Lett., 21, 193 (2000).
17. E. Zanoni, M. Manfredi, S. Bigliardi, A. Paccagnella, P. Pisoni, C. Tedesco, and C. Canali, IEEE Trans. Electron Devices, 39, 1849 (1992).
18. C. H. Tan, G. J. Rees, P. A. Houston, J. S. Ng, W. K. Ng, and J. P. R. David, Appl. Phys. Lett., 84, 2322 (2004).
19. G. A. Baraff, Phys. Rev., 128, 2507 (1962).