Comparisons between mesa- and airbridge-gate AlGaAs/InGaAs doped-channel field-effect transistors

Semiconductor Science and Technology

Volumn 13, Issue 7, 1998, Pages 796-800

  Lour, W S ^a   Lia, C Y ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

AIRBRIDGE-GATE DEVICE; DOPED CHANNEL FIELD EFFECT TRANSISTORS; MESA-GATE DEVICE;

GATES (TRANSISTOR);

EID: 0032115890     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/7/024     Document Type: Review

References (12)

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12. Hur K Y and Compton R C 1993 Airbridged-gate MESFET's fabricated by isotropic reactive ion etching IEEE Trans. Electron Devices 40 1736