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Volumn 301-302, Issue SPEC. ISS., 2007, Pages 1025-1029

Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (4 1 1)A-oriented substrates by MBE

(9) Watanabe, Issei a Shinohara, Keisuke a Kitada, Takahiro b Shimomura, Satoshi b Endoh, Akira c Yamashita, Yoshimi c Mimura, Takashi c Hiyamizu, Satoshi b Matsui, Toshiaki a

a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

b OSAKA UNIVERSITY (Japan)

c FUJITSU LABORATORIES LTD (Japan)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting indium compounds; B3. High electron mobility transistors

Indexed keywords

COOLING; GOLD; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; PLATINUM; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; THERMODYNAMIC STABILITY; TITANIUM;

CRYOGENIC COOLING; OHMIC ELECTRODES; ORIENTED SUBSTRATES; SOURCE DRAIN RESISTANCE;

OHMIC CONTACTS;

EID: 33947308274 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.11.056 Document Type: Article

Times cited : (8)

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