Lateral diffusion effects in AuGe based source-drain contacts to Alinas/InGaAs/InP doped channel MODFETs

Journal of Electronic Materials

Volumn 28, Issue 8, 1999, Pages 944-948

  Iliadis, A A ^a   Zahurak, J K ^b   Neal, T ^c   Masselink, W T ^d  

^a UNIVERSITY OF MARYLAND   (United States)

^b MICRON TECHNOLOGY INC   (United States)

^c Microelectronics Research Laboratory   (United States)

^d HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; GOLD ALLOYS; MULTILAYERS; NICKEL ALLOYS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE;

AUGER DEPTH PROFILING; BUFFER LAYER; LATERAL DIFFUSION; LATERAL ENCROACHMENT; MODFETS; SOURCE DRAIN CONTACTS;

OHMIC CONTACTS;

EID: 0033349672     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0201-0     Document Type: Article

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