BCB-bridged distributed wideband SPST switch using 0.25-μm In0.5Al0.5As-In0.5Ga0.5As metamorphic HEMTs

IEEE Transactions on Electron Devices

Volumn 52, Issue 1, 2005, Pages 1-5

  Lin, Cheng Kuo ^a   Wang, Wen Kai ^a   Chan, Yi Jen ^a   Chiou, Hwann Kaeo ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Benzocyclobutene (BCB); Distributed single pole single through (SPST) switch; Electron transit time; Metamorphic high electron mobility transistor (mHEMT)

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CURRENTS; INSERTION LOSSES; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PERMITTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR SWITCHES; SUBSTRATES;

BENZOCYCLOBUTENE (BCB); DISTRIBUTED SINGLE POLE SINGLE THROUGH (SPST) SWITCH; ELECTRON TRANSIT TIME; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (MHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 12344335873     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.841277     Document Type: Article

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