Atomic scale stresses and strains in Ge/Si(001) nanopixels: An atomistic simulation study

Journal of Applied Physics

Volumn 96, Issue 8, 2004, Pages 4429-4443

  Makeev, Maxim A ^a   Yu, Wenbin ^a,b   Madhukar, Anupam ^a,b  

^a University of Southern California ^*  (United States)

^b Alaris Medical Systems   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; HYDROSTATIC STRESSES; NANOPIXELS; STRAIN ENERGY;

COMPUTER SIMULATION; CRYSTAL LATTICES; INTERFACES (MATERIALS); LATTICE CONSTANTS; NANOSTRUCTURED MATERIALS; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STRAIN; STRESS ANALYSIS;

SEMICONDUCTING GERMANIUM;

EID: 7644220989     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1792811     Document Type: Article

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