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Volumn 73, Issue 16, 1998, Pages 2322-2324

Structure and photoluminescence of single AlGaAs/GaAs quantum dots grown in inverted tetrahedral pyramids

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[No Author keywords available]

Indexed keywords


EID: 0000659341     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121810     Document Type: Article
Times cited : (49)

References (26)
  • 25
    • 21944454790 scopus 로고    scopus 로고
    • note
    • 33 meV corresponds to the spacing of the excited state transitions observed in Fig. 3(b). Neglecting a possible small contribution of hole excited states, we use this value for the electron state spacing in our calculation to obtain an approximate value for the QD size.
  • 26
    • 21944451609 scopus 로고
    • In our calculation, we used 45% Al in the barrier and the corresponding band gap, band offsets, and electron masses from Properties of Aluminum Gallium Arsenide, edited by Inst. Electr. Eng., London
    • In our calculation, we used 45% Al in the barrier and the corresponding band gap, band offsets, and electron masses from Properties of Aluminum Gallium Arsenide, edited by S. Adachi Data review series, Vol. 7 (Inst. Electr. Eng., London, 1993).
    • (1993) Data Review Series , vol.7
    • Adachi, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.