Large-scale atomistic simulations of atomic displacements, stresses, and strains in nanoscale mesas: Effect of mesa edges, corners, and interfaces

Applied Physics Letters

Volumn 81, Issue 20, 2002, Pages 3789-3791

  Makeev, Maxim A ^a   Madhukar, Anupam ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; INTERFACES (MATERIALS); MONOLAYERS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STRAIN; STRESSES; SUBSTRATES; TENSORS;

NANOSCALE MESAS;

NANOSTRUCTURED MATERIALS;

EID: 0037065097     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1518150     Document Type: Article

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