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Volumn 84, Issue 5, 1998, Pages 2507-2512

A method to interpret micro-Raman experiments made to measure nonuniform stresses: Application to local oxidation of silicon structures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000377650     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368411     Document Type: Article
Times cited : (33)

References (26)
  • 9
    • 0003678332 scopus 로고
    • Germanium-Silicon Strained Layers and Heterostructures
    • Academic, Boston
    • S. C. Jain, Germanium-Silicon Strained Layers and Heterostructures, Advances in Electronics and Electron Physics, Supplement 24 (Academic, Boston, 1994).
    • (1994) Advances in Electronics and Electron Physics , Issue.24 SUPPL.
    • Jain, S.C.1
  • 20
    • 85034300706 scopus 로고    scopus 로고
    • note
    • The strain in the x and y directions was constant in both cases. We are not aware of any published work where Eq. (7) has been used which is needed when strain varies in the x direction also.
  • 25
    • 0004246662 scopus 로고
    • Properties of Silicon
    • INSPEC, London
    • Properties of Silicon, EMIS Data reviews series No. 4 (INSPEC, London 1988).
    • (1988) EMIS Data Reviews Series No. 4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.