High-density GaAs/(GaAs)2(AlAs)2 quantum wires naturally formed on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 814-818

  Higashiwaki, M ^a   Yamamoto, M ^a   Shimomura, S ^a   Adachi, A ^b   Hiyamizu, S ^a  

^a OSAKA UNIVERSITY   (Japan)

^b NISSIN ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DENSITY (SPECIFIC GRAVITY); HETEROJUNCTIONS; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

CARRIER CONFINEMENT;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0031141004     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00861-5     Document Type: Article

References (10)

1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40 (1982) 939.
2. Y. Arakawa and A. Yariv, IEEE J. Quantum Electron. 22 (1986) 1887.
3. K. Inoue, K. Kimura, K. Maehashi, S. Hasegawa, H. Nakashima, M. Iwane, O. Matsuda and K. Murase, J. Crystal Growth 127 (1993) 1041.
4. M. Takeuchi, K. Shiba, K. Sato, H.K. Huang, K. Inoue and H. Nakashima, Jpn. J. Appl. Phys. 34 (1995) 4411.
5. R. Nötzel, N.N. Ledentsov, L. Däweritz and K. Ploog, Phys. Rev. B 45 (1992) 3507.
6. R. Nötzel, D. Eissler and K. Ploog, J. Crystal Growth 127 (1993) 1068.
7. S. Hara, J. Motohisa, T. Fukui and H. Hasegawa, Jpn. J. Appl. Phys. 34 (1995) 4401.
8. M. Higashiwaki, M. Yamamoto, T. Higuchi, S. Shimomura, A. Adachi, Y. Okamoto, N. Sano and S. Hiyamizu, Jpn. J. Appl. Phys. 35 (1996) 606.
9. C.R. McIntyre and L.J. Sham, Phys. Rev. B 45 (1992) 9443.
10. A.A. Yamaguchi and A. Usui, J. Appl. Phys. 78 (1995) 1361.