Acceptors in undoped GaN studied by transient photoluminescence

Physica B: Condensed Matter

Volumn 325, Issue , 2003, Pages 1-7

  Korotkov, Roman Y ^a   Reshchikov, M A ^a,b   Wessels, B W ^a  

^a Northwestern University   (United States)

^b Virginia Commonwealth University   (United States)

Author keywords

Acceptors; GaN; Transient photoluminescence

Indexed keywords

ELECTRON TRANSITIONS; ELECTRONS; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE;

FREE-TO-BOUND TRANSITIONS;

GALLIUM NITRIDE;

EID: 0037213192     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)01209-7     Document Type: Article

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