The effect of internal fields on tunneling current in strained GaN/AlxGa1-xN(0001) structures

Semiconductors

Volumn 37, Issue 4, 2003, Pages 433-438

  Grinyaev, S N ^a   Razzhuvalov, A N ^a  

^a Kuznetsov Physicotechnical Institute   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037397890     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1568463     Document Type: Article

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