A novel method to form conducting channels in SiOx(Si) films for field emission application

Journal of Applied Physics

Volumn 107, Issue 1, 2010, Pages

  Semenenko, M ^a   Evtukh, A ^a   Yilmazoglu, O ^b   Hartnagel, H L ^b   Pavlidis, D ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING CHANNELS; ELECTRON FIELD EMISSION; EMISSION AREA; FIELD EMISSION APPLICATION; FIELD EMISSION CURRENTS; FIELD EMISSION PROPERTY; HIGH CURRENT DENSITIES; NANO-SIZED; NOVEL METHODS; SI SUBSTRATES;

ELECTRIC FIELDS; ELECTRIC PROPERTIES; FIELD EMISSION; PLASMA DEPOSITION; SILICON COMPOUNDS; THERMAL EVAPORATION; THRESHOLD VOLTAGE;

SILICON;

EID: 75649131503     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3273394     Document Type: Article

References (49)

1. I. Brodie and C. A. Spindt, Adv. Electron. Electron Phys. 83, 1 (1992). 10.1016/S0065-2539(08)60006-2
2. H. H. Busta, J. Micromech. Microeng. 2, 43 (1992). 10.1088/0960-1317/2/2/ 001
3. A. Modinos, Field, Thermionic, and Secondary Electron Emission Spectroscopy (Plenum, New York, 1984), p. 320.
4. A. Uhlir, Bell Syst. Tech. J. 35, 333 (1956).
5. D. R. Turner, J. Electrochem. Soc. 105, 402 (1958). 10.1149/1.2428873
6. B. Hamilton, Semicond. Sci. Technol. 10, 1187 (1995). 10.1088/0268-1242/10/9/001
7. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997). 10.1063/1.366536
8. O. Bisi, S. Ossicini, and L. Pavesi, Surf. Sci. Rep. 38, 1 (2000). 10.1016/S0167-5729(99)00012-6 (Pubitemid 30882892)
9. E. C. Boswell, M. Huang, G. D. W. Smith, and P. R. Wilshaw, J. Vac. Sci. Technol. B 14, 1895 (1996). 10.1116/1.588574
10. J. R. Jessing, D. L. Parker, and M. H. Weichold, J. Vac. Sci. Technol. B 14, 1899 (1996). 10.1116/1.588950
11. M. Tejashree, S. V. Bhave, and S. V. Bhoraskar, J. Vac. Sci. Technol. B 16, 2073 (1998).
12. A. A. Evtukh, V. G. Litovchenko, N. I. Klyui, M. O. Semenenko, E. B. Kaganovich, and E. G. Manoilov, Int. J. Nanotechnol. 3, 282 (2006).
13. C. A. Spindt, J. Appl. Phys. 39, 3504 (1968). 10.1063/1.1656810
14. A. A. Evtukh, V. G. Litovchenko, R. I. Marchenko, N. I. Klyui, V. A. Semenovich, and C. Nelep, J. Vac. Sci. Technol. B 14, 2130 (1996). 10.1116/1.588885
15. J. Robertson, Mater. Sci. Eng. 37, 129 (2002). 10.1016/S0927-796X(02) 00005-0
16. A. A. Evtukh, V. G. Litovchenko, R. I. Marchenko, N. I. Klyui, V. G. Popov, and V. A. Semenovich, J. Phys. IV 6, C5-119 (1996). 10.1051/jp4:1996519
17. A. A. Evtukh, H. Hartnagel, V. G. Litovchenko, M. O. Semenenko, and O. Yilmazoglu, Semicond. Sci. Technol. 19, 923 (2004). 10.1088/0268-1242/19/7/025
18. A. A. Evtukh, V. G. Litovchenko, and M. O. Semenenko, J. Vac. Sci. Technol. B 24, 945 (2006). 10.1116/1.2183787
19. M. Semenenko, Ph.D. thesis, V. Ye. Lashkaryov Institute of Semiconductor Physics of the National Academy of Science of Ukraine, Kyiv, 2008 (in Ukrainian).
20. A. Szekeres, T. Nikolova, A. Paneva, A. Cziraki, Gy. Kovacs, I. Lisovskyy, D. Mazunov, I. Indutnyy, and P. Shepeliavyi, J. Optoelectron. Adv. Mater. 7, 1383 (2005).
21. A. A. Evtukh, I. Z. Indutnyy, I. P. Lisovskyy, Yu. M. Litvin, V. G. Litovchenko, P. M. Lytvyn, D. O. Mazunov, Yu. V. Rassamakin, and P. E. Shepeliavy, Semicond. Phys., Quantum Electron. Optoelectron. 6, 32 (2003).
22. A. A. Evtukh, V. Ya. Rassamakin, and Yu. V. Rassamakin, Mater. Sci. 10, 40 (2001).
23. A. Evtukh, O. Bratus', T. Gorbanyuk, and V. Ievtukh, Am. Rev. Public Admin. 5, 3663 (2008).
24. O. L. Bratus', A. A. Evtukh, V. A. Ievtukh, and V. G. Litovchenko, J. Non-Cryst. Solids 354, 4278 (2008). 10.1016/j.jnoncrysol.2008.06.037
25. A. Evtukh, V. Litovchenko, M. Semenenko, O. Yilmazoglu, K. Mutamba, H. L. Hartnagel, and D. Pavlidis, Semicond. Sci. Technol. 21, 1326 (2006). 10.1088/0268-1242/21/9/018 (Pubitemid 44235577)
26. A. A. Evtukh, V. G. Litovchenko, R. I. Marchenko, and S. Yu. Kudzinivsky, J. Vac. Sci. Technol. B 15, 439 (1997). 10.1116/1.589334
27. V. A. Dan'ko, I. Z. Indutnyy, V. S. Lysenko, I. Yu. Maidanchul, V. I. Min'ko, A. N. Nazarov, A. S. Tkachenko, and P. E. Shepeliavyi, Semiconductors 39, 1197 (2005). 10.1134/1.2085270 (Pubitemid 41407263)
28. D. J. DiMaria, D. W. Dong, C. Falcony, T. N. Theis, J. R. Kirtley, J. C. Tsang, D. R. Young, F. L. Pesavento, and S. D. Brorson, J. Appl. Phys. 54, 5801 (1983). 10.1063/1.331806 (Pubitemid 14466849)
29. V. Ya. Bratus', V. A. Yukhimchuk, L. I. Berezhinsky, M. Ya. Valakh, I. P. Vorona, I. Z. Indutnyi, T. T. Petrenko, P. E. Shepeliavyi, and I. B. Yanchuk, Semiconductors 35, 854 (2001). 10.1134/1.1385724
30. M. S. Dunaevskii, J. J. Grob, A. G. Zabrodskii, R. Laiho, and A. N. Titkov, Semiconductors 38, 1254 (2004). 10.1134/1.1823054 (Pubitemid 39604699)
31. D. R. Wolters and J. J. Van der Schoot, Philips J. Res. 40, 115 (1985).
32. D. R. Wolters and J. J. Van der Schoot, Philips J. Res. 40, 137 (1985).
33. D. R. Wolters and J. J. Van der Schoot, Philips J. Res. 40, 164 (1985).
34. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, Rep. Prog. Phys. 33, 1129 (1970). 10.1088/0034-4885/33/3/306
35. A. G. Revesz, Phys. Status Solidi A 57, 235 (1980). 10.1002/pssa. 2210570126
36. H. Bouridah, F. Mansour, R. Mahamdi, N. Bounar, and P. Temple-Boyer, Phys. Status Solidi A 204, 2347 (2007). 10.1002/pssa.200623060 (Pubitemid 47182129)
37. A. Gajovic, D. Gracin, I. Djerdj, N. Tomasic, K. Juraic, and D. S. Su, Appl. Surf. Sci. 254, 2748 (2008). 10.1016/j.apsusc.2007.10.014 (Pubitemid 351220865)
38. G.-M. Wu and C.-Y. Wu, Cryst. Res. Technol. 42, 1271 (2007). 10.1002/crat.200711017 (Pubitemid 350254274)
39. C. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, J. Appl. Phys. 47, 5248 (1976). 10.1063/1.322600
40. V. V. Zhirnov, C. Lizzul-Rinne, G. J. Wojak, R. C. Sanwald, and J. J. Hren, J. Vac. Sci. Technol. B 19, 87 (2001). 10.1116/1.1342006 (Pubitemid 32254495)
41. D. W. Branston and D. Stephani, IEEE Trans. Electron Devices ED-38, 2329 (1991). 10.1109/16.88520 (Pubitemid 21717387)
42. V. G. Litovchenko, A. A. Evtukh, R. I. Marchenko, N. I. Klyui, and V. A. Semenovich, J. Micromech. Microeng. 7, 1 (1997). 10.1088/0960-1317/7/1/002
43. T. Utsumi, IEEE Trans. Electron Devices 38, 2276 (1991). 10.1109/16.88510 (Pubitemid 21717397)
44. O. Klein and E. Z. Lange, Z. Electrochem. Bd. 44, 542 (1938).
45. R. Holm and E. Holm, Electric Contacts Handbook (Springer Verlag, Berlin-Gottingen-Heidelberg, 1958).
46. W. Meyerhof, Phys. Rev. 71, 727 (1947). 10.1103/PhysRev.71.727
47. J. Simmons, Phys. Rev. Lett. 10, 10 (1963). 10.1103/PhysRevLett.10.10
48. R. Bedos, Compt. Rend. 259, 1965 (1964).
49. K. Krishnan and S. Jain, Nature (London) 170, 759 (1952). 10.1038/170759a0