Characterization of porous silicon field emitter properties

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 1895-1898

  Boswell, E C ^a   Huang, M ^a   Smith, G D W ^a   Wilshaw, P R ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000043183     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588574     Document Type: Article

References (7)

1. P. R. Wilshaw and E. C. Boswell, J. Vac. Sci. Technol. B 12, 662 (1994).
2. E. C. Boswell, T. Y. Seong, and P. R. Wilshaw, J. Vac. Sci. Technol. B 13, 437 (1995).
3. M. Takai, M. Yamashita, H. Wille, S. Yura, S. Horibata, and M. Ototake, Appl. Phys. Lett. 66, 422 (1995).
4. W. K. Yue, D. L. Parker, and M. H. Weichold, in Proceedings of IEDM 90, San Francisco, CA (IEEE, New York, 1990), p. 107.
5. M. I. J. Beale, J. D. Benjamin, M. J. Uren, N. G. Chew, and A. G. Callis, J. Cryst. Growth 73, 622 (1985).
6. S. Frohnhoff, M. G. Berger, M. Thorissen, C. Dicker, L. Vescan, H. Munder, and H. Luth, Thin Solid Films 255, 59 (1995).
7. A. Cerezo, T. J. Godfrey, A. J. W. Moore, and G. D. W. Smith, J. Phys. (Paris) Colloq. 45, C9-315 (1984).