Electrical characterization of SiO2(Si) films as a medium for charge storage

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 12, 2008, Pages 3663-3666

  Evtukh, A ^a   Bratus, O ^a   Gorbanyuk, T ^a   Ievtukh, V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STORAGES; CURRENT TRANSPORTS; DIELECTRIC MATRIXES; ELECTRICAL CHARACTERIZATIONS; ELECTRICAL PROPERTIES; FILM COMPOSITIONS; MIS STRUCTURES; MULTILAYER STRUCTURES; NONVOLATILE MEMORY DEVICES; REACTIVE GASES; SI NANOCRYSTALS; STORED CHARGES; TECHNOLOGICAL CONDITIONS; THERMAL ANNEALING; VACUUM CHAMBERS;

ADMINISTRATIVE DATA PROCESSING; DATA STORAGE EQUIPMENT; ELECTRIC PROPERTIES; GAS PERMEABLE MEMBRANES; METALLIC MATRIX COMPOSITES; NANOCOMPOSITES; NANOCRYSTALLINE ALLOYS; NANOELECTRONICS; NANOTECHNOLOGY; NONVOLATILE STORAGE; PHASE SEPARATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON COMPOUNDS; STRUCTURAL OPTIMIZATION; SWITCHING CIRCUITS;

NANOCRYSTALS;

EID: 57349103094     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200780165     Document Type: Conference Paper

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