Effect of thermal annealing and nitrogen content on amorphous silicon thin-film crystallization

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 7, 2007, Pages 2347-2354

  Bouridah, H ^a   Mansour, F ^b   Mahamdi, R ^b   Bounar, N ^a   Temple Boyer, P ^c  

^a UNIVERSITY OF JIJEL   (Algeria)

^b Universite Mentouri Constantine   (Algeria)

^c LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-TEMPERATURE ANNEALING; NITROGEN CONTENT; POLYCRYSTALLINE STRUCTURES;

AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 34547539739     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200623060     Document Type: Article

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