Kinetics of structural and phase transformations in thin SiOx films in the course of a rapid thermal annealing

Semiconductors

Volumn 39, Issue 10, 2005, Pages 1197-1203

  Dan'ko, V A ^a   Indutnyi I Z ^a   Lysenko, V S ^a   Maidanchuk I Yu ^a   Min'ko, V I ^a   Nazarov, A N ^a   Tkachenko, A S ^a   Shepelyavyi P E ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

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[No Author keywords available]

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EID: 26044456402     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.2085270     Document Type: Article

References (27)

1. M. Molinari, H. Rinnert, and H. Vergnat, Appl. Phys. Lett. 82, 3877 (2003).
2. V. Ya. Bratus', V. A. Yukhimchuk, L. I. Berezhinskiǐ, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 854 (2001)
3. [Semiconductors 35, 821 (2001)].
4. I. P. Lisovskiǐ, I. Z. Indutnyǐ, B. N. Gnennyǐ, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 98 (2003)
5. [Semiconductors 37, 97 (2003)].
6. B. Garrido Fernandez, M. Lopez, C. Garcia, et al., Appl. Phys. Lett. 81, 798 (2002).
7. M. Lopez, B. Garrido, C. Garcia, et al., Appl. Phys. Lett. 80, 1637 (2002).
8. B. Gallas, C.-C. Kao, S. Fission, et al., Appl. Surf. Sci. 185, 317 (2002).
9. Daigil Cha, Jung H. Shin, In-Hyuk Song, and Min-Koo Han, Appl. Phys. Lett. 84, 1287 (2004).
10. G. A. Kachurin, I. E. Tyschenko, V. Skorupa, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 31, 730 (1997)
11. [Semiconductors 31, 626 (1997)].
12. G. A. Kachurin, A. F. Leǐer, K. S. Zhuravlev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 1371 (1998)
13. [Semiconductors 32, 1222 (1998)].
14. G. A. Kachurin, S. G. Yanovskaya, V. A. Volodin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 685 (2002)
15. [Semiconductors 36, 647 (2002)].
16. G. Zuther, Phys. Status Solidi A 59, K109 (1980).
17. D. Nesheva, C. Raptis, A. Perakis, et al., J. Appl. Phys. 92, 4678 (2002).
18. M. Nakamura, V. Mochizuki, K. Usami, et al., Solid State Commun. 50, 1079 (1984).
19. I. Z. Indutnyy, I. P. Lisovskyy, D. O. Mazunov, et al., Semicond. Phys. Quantum Electron. Optoelectron. 7, 161 (2004).
20. D. I. Tetel'baum, O. N. Gorshkov, A. P. Kasatkin, et al., Fiz. Tverd. Tela (St. Petersburg) 47, 17 (2005)
21. [Phys. Solid State 47, 13 (2005)].
22. C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B 48, 11024 (1993).
23. L. A. Nesbit, Appl. Phys. Lett. 46, 38 (1985).
24. D. Mathiot, J. P. Schunck, M. Perego, et al., J. Appl. Phys. 94, 2136 (2003).
25. Physical Properties. Properties of Elements: Handbook, Ed. by V. Samsonov (Metallurgiya, Moscow, 1976), Part 1 [in Russian].
26. I. P. Lisovskiǐ, I. Z. Indutnyǐ, V. G. Litovchenko, et al., Ukr. Fiz. Zh. 48, 250 (2003).
27. VLSI Technology, Ed. by S. M. Sze (McGraw-Hill, New York, 1983; Mir, Moscow, 1986), Vol. 1.