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Journal of Applied Physics

Volumn 107, Issue 1, 2010, Pages

Effects of applied electric field and hydrostatic pressure on donor impurity states in cylindrical GaN/AlN quantum dot

(3) Xia, Congxin a Zeng, Zaiping a Wei, Shuyi a

a HENAN NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED ELECTRIC FIELD; COMPETITION EFFECTS; DONOR BINDING; DONOR IMPURITY STATE; EFFECTIVE MASS APPROXIMATION; GROWTH DIRECTIONS; HYDROGENIC IMPURITIES; IMPURITY STATE; NUMERICAL RESULTS; QUANTUM DOT; QUANTUM DOTS; QUANTUM SIZE; SEMICONDUCTING NANOSTRUCTURES; SMALL SIZE; ZINC-BLENDE;

BINDING ENERGY; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; HYDRAULICS; HYDRODYNAMICS; HYDROSTATIC PRESSURE; NUCLEAR ENERGY; NUMERICAL ANALYSIS; POTENTIAL ENERGY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; ZINC;

SEMICONDUCTOR QUANTUM DOTS;

EID: 75649099738 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3275507 Document Type: Article

Times cited : (13)

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