Binding energies of donors in quantum wells under hydrostatic pressure

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 319, Issue 1-2, 2003, Pages 191-197

  Zhao, G J ^b   Liang, X X ^a,b   Ban, S L ^a,b  

^a CCAST WORLD LABORATORY   (China)

^b INNER MONGOLIA UNIVERSITY   (China)

Author keywords

Binding energies; Donors; Hydrostatic pressure; Quantum well

Indexed keywords

GALLIUM ARSENIDE; GALLIUM NITRIDE; HYDRAULICS; HYDROSTATIC PRESSURE; III-V SEMICONDUCTORS; PRESSURE EFFECTS; SEMICONDUCTOR QUANTUM WELLS;

AL-CONCENTRATION; BARRIER HEIGHTS; CONDUCTION BAND OFFSET; DONORS; EFFECTIVE MASS; NUMERICAL RESULTS; VARIATIONAL METHODS;

BINDING ENERGY;

ARTICLE; CALCULATION; DIELECTRIC CONSTANT; ELECTRIC CONDUCTIVITY; ENERGY BALANCE; HYDROSTATIC PRESSURE; PRESSURE; QUANTUM MECHANICS;

EID: 1042290541     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2003.10.006     Document Type: Article

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