Temperature effects on interface polarons in a strained (111)-oriented zinc-blende GaN/AlGaN heterojunction under pressure

Journal of Semiconductors

Volumn 30, Issue 3, 2009, Pages

  Zhang, Min ^a,b   Ban, Shiliang ^a  

^a INNER MONGOLIA UNIVERSITY   (China)

^b INNER MONGOLIA NORMAL UNIVERSITY   (China)

Author keywords

Polaron; Pressure; Strained zinc blende heterojunction; Temperature

Indexed keywords

COHERENT POTENTIAL APPROXIMATION; EFFECTIVE MASS; ELECTRON DENSITIES; FINITE TEMPERATURES; HIGHER FREQUENCIES; INTERFACE OPTICAL-PHONON MODES; LONGITUDINAL OPTICAL PHONONS; LOWER FREQUENCIES; MODIFIED LLP VARIATIONAL METHOD; NUMERICAL RESULTS; OPTICAL PHONON MODES; SELF TRAPPING ENERGY; STRAINED ZINC-BLENDE HETEROJUNCTION; TEMPERATURE EFFECTS; ZINC-BLENDE;

CARRIER CONCENTRATION; ELECTRON DENSITY MEASUREMENT; ELECTRONS; GALLIUM; HYDRAULICS; HYDRODYNAMICS; HYDROSTATIC PRESSURE; NUMERICAL ANALYSIS; PHONONS; POLARONS; PRESSURE EFFECTS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; ZINC;

HETEROJUNCTIONS;

EID: 64749101774     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/30/3/032001     Document Type: Article

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