Acceptor and donor impurities in GaN nanocrystals

Journal of Applied Physics

Volumn 104, Issue 4, 2008, Pages

  Echeverria Arrondo C ^a,b   Prez Conde J ^a   Bhattacharjee, A K ^c  

^a PUBLIC UNIVERSITY OF NAVARRE   (Spain)

^b DONOSTIA INTERNATIONAL PHYSICS CENTER DIPC   (Spain)

^c UNIVERSITÉ PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BINDING SITES; GALLIUM ALLOYS; GALLIUM NITRIDE; IMPURITIES; LAWS AND LEGISLATION; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NUCLEAR ENERGY; NUCLEAR PHYSICS; POTENTIAL ENERGY; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SHELLS (STRUCTURES); WAVE FUNCTIONS; ZINC;

DONOR STATES; EN ERGY SPECTRUM; QUANTUM DOTS; SPHERICAL SHAPES; ZINC-BLENDE;

BINDING ENERGY;

EID: 50849144845     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2970165     Document Type: Article

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