Exciton states in zinc-blende InGaN/GaN quantum dot

Current Applied Physics

Volumn 8, Issue 2, 2008, Pages 153-158

  Xia, Congxin ^a   Jiang, Fengchn ^b   Wei, Shuyi ^a  

^a HENAN NORMAL UNIVERSITY   (China)

^b ZHENGZHOU UNIVERSITY OF LIGHT INDUSTRY   (China)

Author keywords

Exciton; InGaN; Quantum dot

Indexed keywords

BINDING ENERGY; EXCITONS; GALLIUM NITRIDE; GROUND STATE; LIGHT EMISSION; OPTICAL TRANSITIONS; SEMICONDUCTING INDIUM COMPOUNDS;

EXCITON STATES; FINITE BAND OFFSETS; INTERBAND EMISSION ENERGY; ZINC BLENDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 35548929730     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2007.07.001     Document Type: Article

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