Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers

Journal of Applied Physics

Volumn 100, Issue 7, 2006, Pages

  Fu, Y ^a,b   Wei, Y Q ^a   Wang, X D ^a   Sadeghi, M ^a   Wang, S M ^a   Larsson, A ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b School of Biotechnology   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY SUBLEVELS; GAIN SPECTRUM; SPECTRAL GAIN;

ATOMS; BAND STRUCTURE; CONDENSATION; ELECTRON ENERGY LEVELS; GAIN CONTROL; SEMICONDUCTING GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33749987763     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2356782     Document Type: Article

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