Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 372, Issue 42, 2008, Pages 6420-6423

  Xia, Congxin ^a   Liu, Yaming ^b   Wei, Shuyi ^a  

^a HENAN NORMAL UNIVERSITY   (China)

^b HENAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

71.55. i; 73.21.La; Hydrogenic impurity; Quantum dots

Indexed keywords

BINDING ENERGY; GALLIUM NITRIDE; GRAPHENE QUANTUM DOTS; III-V SEMICONDUCTORS; NANOCRYSTALS; ZINC; ZINC SULFIDE;

73.21.LA; COUPLED QUANTUM DOTS; EFFECTIVE MASS APPROXIMATION; HYDROGENIC IMPURITIES; IMPURITY POSITIONS; NUMERICAL RESULTS; STRUCTURAL PARAMETER; VARIATIONAL METHODS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 52149086548     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2008.08.062     Document Type: Article

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