External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Jiang, Liming ^a   Wang, Hailong ^a   Wu, Huiting ^a   Gong, Qian ^b   Feng, Songlin ^b  

^a QUFU NORMAL UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BINDING ENERGY; BINDING SITES; ELECTRIC FIELD EFFECTS; NUCLEAR ENERGY; POTENTIAL ENERGY; SEMICONDUCTOR QUANTUM WELLS; ZINC;

ASYMMETRICAL DISTRIBUTIONS; CYLINDRICAL QUANTUM DOTS; DOT HEIGHTS; EFFECTIVE MASS ENVELOPE FUNCTIONS; ENERGY LEVELS; EXTERNAL ELECTRIC FIELDS; EXTERNAL ELECTRIC-FIELD EFFECTS; HYDROGENIC DONOR IMPURITIES; HYDROGENIC IMPURITIES; PLANE-WAVE BASIS; STARK SHIFTS; ZINC BLENDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 62549141532     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3080175     Document Type: Article

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