Chapter 4 Erbium in Silicon

Semiconductors and Semimetals

Volumn 49, Issue C, 1997, Pages 111-156

  Michel, J ^a   Assali, L V C ^a   Morse, M T ^a   Kimerling, L C ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ERBIUM;

EID: 0011913467     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62502-8     Document Type: Article

References (87)

1. Adler D.L., Jacobson D.C., Eaglesham D.J., Marcus M.A., Benton J.L., Poate J.M., and Citrin P.H. Appl Phys. Lett. 61 (1992) 2118
2. Ageev V.V., Aksenova N.S., Kokovina V.N., and Troshina E.P. ozv. Leningr. Elektrotekh. Inst. 221 (1977) 80
3. O.V. Alexandrov, Emtsev. V. V., D.S. Poloskin N.A. Sobolev E.I. Shek Semicond. 28, 1126
4. Anderson F.G. Appl. Phys. Lett. 68 (1996) 2421
5. Andry P.S., Varhue W.J., Ladipo F., Ahmed K., Adams E., Lavoie M., Klein P.B., Hengehold R., and Hunter J. J. Appl. Phys. 80 (1996) 551
6. Beach D.B., Collins R.T., Legoues F.K., and Chu J.O. Mat. Res. Soc. Symp. Proc. 282 (1992) 397
7. Benton J.L., Michel J., Kimerling L.C., Jacobson D.C., Xie Y.H., Eaglesham D.J., Fitzgerald E.A., and Poate J.M. J. Appl. Phys. 70 (1991) 2667
8. Benton J.L., Eaglesham D.J., Almonte M., Citrin P.H., Marcus M.A., Adler D.L., Jacobson D.C., and Poate J.M. Mat. Res. Soc. Symp. Proc. 301 (1993) 119
9. Coffa S., Priolo F., Franzo G., Bellani V., Carnera A., and Spinella C. Phys. Rev. B 48 (1993) 11782
10. Coffa S., Franzo G., Priolo F., Polman A., and Serna R. Phys. Rev. B 49 (1994) 16313
11. Crosswhite H.M., and Moos H.W. Optical Properties of Ions in Crystals. (1967), Wiley, New York
12. Custer J.S., Polman A., and van Pinxteren H.M. J. Appl. Phys. 75 (1994) 2809
13. De Dood M.J.A., Kik P.G., Shin J.H., and Polman A. Mat. Res. Soc. Symp. Proc. 422 (1996) 219
14. DeLeo G.G., and Fowler W.B. Semicond. and Semimet. 34 (1991) 511
15. Delerue C., and Lannoo M. Phys. Rev. Lett. 67 (1991) 3006
16. Delerue C., and Lannoo M. Mater. Sci. Forum 143-147 (1994) 699
17. Dieke G.H. Spectra and Energy Levels of Rare Earth Ions in Crystals. (1968), Wiley, New York
18. Duan X., Palm J., Zheng B., Morse M.T., Michel J., and Kimerling L.C. Mat. Res. Soc. Symp. Proc. 442 (1997) 249
19. Eaglesham D.J., Michel J., Fitrgerald E.A., Jacobson D.C., Poate J.M., Benton J.L., Polman A., Xie Y.H., and Kimerling L.C. Appl. Phys. Lett. 58 (1991) 2797
20. Efeoglu H., Evans J.H., Jackman T.E., Hamilton B., Houghton D.C., Langer J.M., Peaker A.R., Perovic D., Poole I., Ravel N., Hamment P., and Chan C.W. Semicond. Sci. Technol. 8 (1993) 236
21. Emtsev V.V., Alexandrov O.V., Poloskin D.S., Shek E.I., and Sobolev N.A. Mater. Sci. Forum 196-201 (1995) 615
22. Ennen H., Schneider J., Pomrenke G., and Axmann A. Appl. Phys. Lett. 43 (1983) 943
23. Ennen H., Pomrenke G., Axmann A., Eisele K., Hayde W., and Schneider J. Appl. Phys. Lett. 46 (1985) 381
24. Ennen H., Pomrenke G., and Axmann A. J. Appl. Phys. 57 (1988) 2182
25. Favennec P.N., L'Haridon H., Salvi M., Moutonnet D., and Le Guillou. Electronic Lett. 25 (1989) 718
26. Favennec P.N., L'Haridon H., Moutonnet D., Salvi M., and Gauneau M. Jpn. J. Appl. Phys. 29 (1990) L524
27. Franzo G., Priolo F., Coffa S., Polman A., and Carnera A. Appl. Phys. Lett. 64 (1994) 2235
28. Freeland P.E., Jackson K.A., Lowe C.W., and Patel J.R. Appl. Phys. Lett. 30 (1977) 31
29. Gan F., Assali L.V.C., and Kimerling L.C. Mater. Sci. Forum 196-201 (1995) 579
30. L.V. C. Assali F. Gan L.C. Kimerling (1992). To be published
31. Gregorkiewicz T., Tsimperidis I., Ammerlaan C.A.J., Widderhoven F.P., and Sobolev N.A. Mat. Res. Soc. Symp. Proc. 422 (1996) 207
32. Hartung J., Evans J.H., Dawson P., Scholes A.P., Taskin T., Huda M.Q., Jeynes C., and Peaker A.R. Mat. Res. Soc. Symp. Proc. 422 (1996) 119
33. Jantsch W., Przybylinska H., Suprun-Belevich Y., Stepikhova M., Hendorfer G., and Palmetshofer L. Mater. Sci. Forum 196-201 (1995) 609
34. Jantsch W., Przybylinska H., Skierbiszewski C., Lanzerstorfer S., and Palmetshofer L. Mater. Res. Soc. Symp. Proc. 422 (1996) 101
35. Kim H.K., Li C.C., Fang X.M., Solomon J., Nykolak G., and Becker P.C. Mat. Res. Soc. Symp. Proc. 301 (1993) 55
36. Lannoo M., and Delerue C. Mat. Res. Soc. Sym. Proc. 301 (1993) 385
37. Libertino S., Coffa S., Franzo G., and Priolo F. J. Appl. Phys. 78 (1995) 3867
38. Liu P., Zhang J.P., Wilson R.J., Curello G., Rao S.S., and Hemment P.L.F. Appl. Phys. Lett. 66 (1995) 3158
39. Maat-Gersdorf I., Gregorkiewicz T., Ammerlaan C.A.J., and Sobolev N.A. Semicond. Sci. Technol. 10 (1995) 666
40. Martin W.C., Zalubas R., and Hagan L. In: Moore C.E. (Ed). Atomic Energy Levels (1971), U. S. Government Printing Office, Washington, DC
41. Matsuoka M., and Tohno S.-i. J. Vac. Sci. Technol A 13 (1995) 305
42. Matsuoka M., and Tohno S.-i. J. Appl. Phys. 78 (1995) 2751
43. Michel J., Benton J.L., Ferrante R.F., Jacobson D.C., Eaglesham D.J., Fitzgerald E.A., Xie Y.H., Poate J.M., and Kimerling L.C. J. Appl. Phys. 70 (1991) 2672
44. Michel J., Kimerling L.C., Benton J.L., Eaglesham D.J., Fitzgerald E.A., Jacobson D.C., Poate J.M., Xie Y.H., and Ferrante R.F. Mater. Sci. Forum 83-87 (1992) 653
45. Michel J., Zheng B., Palm J., Ouellette E., Can F., and Kimerling L.C. Mat. Res. Soc. Symp. Proc. 422 (1996) 317
46. Miyashita K., Shiraki Y., Houghton D.C., and Fukatsu S. Appl. Phys. Lett. 67 (1995) 235
47. Morse M.T., Zheng B., Palm J., Duan X., and Kimerling L.C. Mat. Res. Soc. Symp. Proc. 422 (1996) 41
48. Nainov V.O., Sobolev N.A., Alexandrov O.B., Bresler M.S., Gusev O.V., Gusinskii G.M., Shek E.I., Makaviichuk M.I., and Parshin E.O. Nucl. lnstr. and Meth. in Phys. Res. B 99 (1995) 587
49. Nakashima K. Mat. Res. Soc. Symp. Proc. 301 (1993) 61
50. Nazyrov D.E., Kulikov G.S., and Malkovich R.Sh. Sov. Phys. Semicond. 25 (1991) 997
51. Needles M., Schluter M., and Lannoo M. Phys. Rev. B 47 (1993) 155
52. Palm J., Gan F., and Kimerling L.C. SPIE Proc. 2706 (1995) 31
53. Palm J., Gan F., Michel J., and Kimerling L.C. Phys. Rev. B 54 (1996) 17603
54. J. Palm F. Gan J. Michel L.C. Kimerling (1997). To be published
55. Polman A., Custer J.S., Snoeke E., and van den Hoven G.N. Appl. Phys. Lett. 62 (1993) 507
56. Priolo F., Franzo G., Coffa S., Polman A., Libertino S., Barklie R., and Carey D. J. Appl. Phys. 78 (1995) 3874
57. Przybylinska H., Enzenhofer J., Hendorfer G., Schisswohl M., Palmetshofer L., and Jantsch W. Mater. Sci. Forum 143-147 (1994) 715
58. Przybylinska H., Hendorfer G., Bruckner M., Palmetshofer L., and Jantsch W. Appl. Phys. Lett. 66 (1995) 490
59. Ren F.Y.G., Michel J., Sun-Paduano Q., Kitagawa B., Zheng H., Jacobson D.C., Poate J.M., and Kimerling L.C. Mater. Res. Soc. Symp. Proc. 301 (1993) 87
60. Ren F.Y.G., Michel J., Jacobson D.C., Poate J.M., and Kimerling L.C. Mat. Res. Soc. Symp. Proc. 316 (1994) 493
61. F.Y. G. Ren (1994b). Ph.D. thesis, Massachusetts Institute of Technology
62. Roberts S., and Parker G. Materials Lett. 24 (1995) 307
63. Rogers J.L., Andry P.S., Varhue W.J., Adams E., Lavoie M., and Klein P.B. J. Appl. Phys. 78 (1995) 6241
64. Rogers J.L., Andry P.S., Varhue W.J., McGaughnea P., Adams E., and Kontra R. Appl. Phys. Lett. 67 (1995) 971
65. Schmitt-Rink S., Varma C.M., and Levi A.F.J. Phys. Rev. Lett. 66 (1991) 2782
66. Serna R., Lohmeier M.P., Zagwijn M., Vlieg E., and Polman A. Appl. Phys. Lett. 66 (1995) 1385
67. Serna R., Shin J.H., Lohmeier M., Vlieg E., Polman A., and Alkemade P.F.A. J. Appl. Phys. 79 (1996) 2658
68. Smith D.L. Thin-Film Deposition. (1994), McGraw-Hill, New York
69. Sobolev N.A., Alexandrov O.V., Gresserov B.N., Gusinskii G.M., Naidenov V.O., Shick E.I., Stepanov V.I., Yu V., Vyzhigin Chepik L.F., and Troshina E.P. Solid State Phenom. 32-33 (1993) 83
70. Sobolev N.A., Bresler M.S., Gusev O.B., Shek E.I., Makoviichuk M.I., and Parshin E.O. Semicond. 28 (1994) 1100
71. Sobolev N.A. Semicond. 29 (1995) 595
72. Sobolev N.A., Alexandrov O.V., Bresler M.S., Gusev O.B., Shek E.I., Makoviichuck M.I., and Parskin E.O. Mater. Sci. Forum 196-201 (1995) 597
73. Stimmer J., Reittinger A., Absteiter G., Holzbrecher H., and Buchal C. Mat. Res. Soc. Symp. Proc. 422 (1996) 15
74. Stimmer J., Reittinger A., Nutzel J.F., Holzbrecher G., Absteiter H., and Buchal C. Appl. Phys. Lett. 68 (1996) 3280
75. Sze S.M. Physics of Semiconductor Device, 2nd edn. (1981), Wiley, New York p. 69
76. Tamura M., and Suzuki T. Nucl. Instrum. Methods B 39 (1989) 318
77. Tang Y.S., Jingping Z., Heasman K.C., and Sealey B.J. Solid State Comm. 72 (1989) 991
78. Tang Y.S., Heasman K.C., Gillin W.P., and Sealy B.J. Appl. Phys. Lett. 55 (1989) 432
79. Thilderquist A., Ahn S., Michel J., Ngiam S., Kohlenbrander K.D., and Kimerling L.C. Mat. Res. Soc. Symp. Proc. 405 (1996) 265
80. Thonke K., Hermann H.U., and Schneider J. J. Phys. C 21 (1988) 5881
81. Tsimperidis I., Gregorkiewicz T., and Ammerlaan C.A.J. Mater. Sci. Forum 196-201 (1995) 591
82. Utzig J. J. Appl. Phys. 65 (1989) 3868
83. Widdershoven F.P., and Naus J.P.M. Mat. Sci. Eng. B4 (1989) 71
84. Xie Y.H., Fitzgerald E.A., and Mii Y.J. J. Appl. Phys. 70 (1991) 3223
85. Yang Y.S. Physica Lett. A 155 (1991) 219
86. Zheng B., Michel J., Ren F.Y.G., Kimerling L.C., Jacobson D.C., and Poate J.M. Appl. Phys. Lett. 64 (1994) 2842
87. B. Zheng (1996). Ph.D. thesis, Massachussetts Institute of Technology