Structure of the (110) antiphase boundary in gallium phosphide

Journal of Microscopy

Volumn 208, Issue 2, 2002, Pages 84-99

  Cohen, D ^a   Carter, C B ^a,b  

^a University of Minnesota   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Anti phase boundary; Bonding; Electron diffraction (CBED); Semiconductors; TEM

Indexed keywords

ELECTRON DIFFRACTION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; RIGID STRUCTURES;

ANTIPHASE BOUNDARIES; ANTIPHASE DOMAINS; BONDING; CRYSTAL POLARITIES; ELECTRON DIFFRACTION (CBED); FRINGE CONTRASTS; MOLECULAR-BEAM EPITAXY; RIGID BODY; SI(0 0 1); TEM;

GALLIUM PHOSPHIDE;

GALLIUM; GALLIUM PHOSPHIDE; SILICON DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; CALCULATION; CHEMICAL BOND; CHEMICAL STRUCTURE; CRYSTALLOGRAPHY; ELECTRON DIFFRACTION; ENERGY; FILM; GEOMETRY; IMAGING; MODEL; PRIORITY JOURNAL; STRUCTURE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0036434345     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.2002.01070.x     Document Type: Article

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