Porosity and structure evolution of a SiOCH low k material during post-etch cleaning process

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2600-2605

  Broussous, L ^a   Puyrenier, W ^a   Rebiscoul, D ^b   Rouessac, V ^c   Ayral, A ^c  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c UNIVERSITÉ DE MONTPELLIER   (France)

Author keywords

Diluted hydrofluoric acid; Low k material; Plasma treatments; Pore sealing; Porosity; Wet cleaning

Indexed keywords

CHARACTERIZATION; DISSOLUTION; ETCHING; HYDROFLUORIC ACID; PERMITTIVITY; POROSITY; SILICON COMPOUNDS; SURFACE CLEANING;

DILUTED HYDROFLUORIC ACID; PLASMA TREATMENTS; PORE SEALING; WET CLEANING;

DIELECTRIC MATERIALS;

EID: 34648846042     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.07.001     Document Type: Article

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