Improved characterization of Fourier transform infrared spectra analysis for post-etched ultra-low-κ SiOCH dielectric using chemometric methods

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 521-526

  Oszinda, Thomas ^a   Beyer, Volkhard ^a   Schaller, Matthias ^b   Fischer, Daniel ^b   Bartsch, Christin ^b   Schulz, Stefan E ^c  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b IBM MICROELECTRONICS   (United States)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; BOND STRENGTH (CHEMICAL); CHEMICAL ANALYSIS; CHEMICAL BONDS; CHEMICAL MODIFICATION; CHROMATOGRAPHY; CURVE FITTING; DIELECTRIC FILMS; DRUG PRODUCTS; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; QUALITY CONTROL; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS;

ANNEAL TREATMENTS; AUGER ELECTRONS; BOND MODIFICATIONS; CARBON CONTENTS; CARBON LOSS; CHEMICAL VAPOR DEPOSITED; CHEMOMETRIC METHODS; FAST ASSESSMENTS; FOURIER TRANSFORM INFRARED; FOURIER TRANSFORM INFRARED SPECTRUM; FT-IR SPECTRUM; FTIR; INFRARED SPECTRUM; PARTIAL LEAST SQUARE REGRESSIONS; PHOTORESIST REMOVALS; PLASMA GAS; PRINCIPLE COMPONENT ANALYSIS; QUALITATIVE ANALYSIS; REGRESSION METHODS; STRUCTURAL CHANGES; ULK LAYERS; VIBRATION PEAKS;

INFRARED SPECTROSCOPY;

EID: 59949093969     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3043466     Document Type: Article

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