In situ X-ray diffraction study of thin film Ir/Si solid state reactions

Microelectronic Engineering

Volumn 87, Issue 3, 2010, Pages 258-262

  Knaepen, W ^a   Demeulemeester, J ^b   Deduytsche, D ^a   Jordan Sweet, J L ^c   Vantomme, A ^b   Van Meirhaeghe, R L ^a   Detavernier, C ^a   Lavoie, C ^c  

^a GHENT UNIVERSITY   (Belgium)

^b KU LEUVEN   (Belgium)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Ir; NiSi; Si; XRD

Indexed keywords

4-POINT PROBE; CONTINUOUS DISTRIBUTION; CRYSTALLIZATION PROCESS; DIFFRACTION PEAKS; EX SITU; FORMATION TEMPERATURE; IN-SITU; KISSINGER ANALYSIS; LASER LIGHT SCATTERING; LOW RESISTIVITY; ON-RAMP; P-TYPE SI; PHASE FORMATION SEQUENCE; POLYCRYSTALLINE-SI; RAMP RATES; ROOM TEMPERATURE; SI SUBSTRATES; SILICIDE FORMATION; SILICON-ON-INSULATORS; SUBSTRATE ORIENTATION; TEMPERATURE RANGE; XRD; XRD SPECTRA;

ACTIVATION ANALYSIS; ACTIVATION ENERGY; AMORPHOUS FILMS; CRYSTALLIZATION; DEPTH PROFILING; DIFFRACTION; ELECTRIC RESISTANCE; ELECTRON ENERGY LOSS SPECTROSCOPY; IRIDIUM; LIGHT; LIGHT SCATTERING; POLYSILICON; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SHEET RESISTANCE; SILICIDES; SOLID STATE REACTIONS; SUBSTRATES; SURFACE REACTIONS; X RAY DIFFRACTION; YTTERBIUM COMPOUNDS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 74449086152     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.06.002     Document Type: Article

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