Formation of amorphous layers by solid-state reaction from thin Ir films on Si(100)

Applied Physics A: Materials Science and Processing

Volumn 68, Issue 4, 1999, Pages 451-455

  Demuth, V ^a   Strunk, H P ^a   Worle D ^a   Kumpf, C ^a   Burkel, E ^a   Schulz, M ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; DEPOSITION; DIFFUSION; FILM PREPARATION; FREE ENERGY; MIXING; PHASE COMPOSITION; SEMICONDUCTING SILICON; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

GRAZING INCIDENCE X RAY REFLECTION; INTERMIXING; SOLID STATE REACTION;

IRIDIUM;

EID: 0033115185     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050922     Document Type: Article

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