RBS characterization of iridium suicides formed by RTA in vacuum

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 113, Issue 1-4, 1996, Pages 279-283

  Rodriguez T ^a   Almendra, A ^a   Da Silva, M F ^b   Soares, J C ^c   Wolters, H ^c   Rodriguez A ^a   Sanz Maudes, J ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b INT   (Portugal)

^c CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; FILM GROWTH; PHASE TRANSITIONS; REACTION KINETICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TEMPERATURE CONTROL; TEMPERATURE MEASUREMENT; THERMAL EFFECTS; VACUUM;

FILM THICKNESS; INTERMIXING; IRIDIUM SILICIDES; RAPID THERMAL ANNEALING;

IRIDIUM COMPOUNDS;

EID: 0030166287     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01411-X     Document Type: Article

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