TEM study of iridium silicide contact layers for low schottky barrier mosfets

Archives of Metallurgy and Materials

Volumn 51, Issue 4, 2006, Pages 551-554

  Laszcz A ^a   Czerwinski, A ^a   Ratajczak, J ^a   Katcki, J ^a   Breil, N ^b,c   Larrieu, G ^b   Dubois, E ^b  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b Institut Superieur de l'Electronique et du Numerique   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Annealing; Iridium silicide; Selected area diffraction; Transmission electron microscope

Indexed keywords

EID: 33847750689     PISSN: 17333490     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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