The effect of Si/Ir codeposition ratio on the Ir silicide/Si(100) interface roughness

Materials Chemistry and Physics

Volumn 43, Issue 2, 1996, Pages 191-194

  Chung, C K ^a   Hwang, J ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Codeposition; Epitaxial iridium silicide films; Interface roughness; Iridium; Silicon

Indexed keywords

DEPOSITION; FILM GROWTH; INTERFACES (MATERIALS); IRIDIUM; IRIDIUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON;

CODEPOSITION; EPITAXIAL IRIDIUM SILICIDE FILM; INTERFACE ROUGHNESS; INTERMIXING; SPATIAL INHOMOGENEITY; TRANSMISSION ELECTRON DIFFRACTION;

SURFACE ROUGHNESS;

EID: 0030084825     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/0254-0584(95)01621-Z     Document Type: Article

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