Etching characteristics and mechanism of indium tin oxide films in an inductively coupled HBr/Ar plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 1, 2010, Pages 11-15

  Kwon, Kwang Ho ^a   Efremov, Alexander ^b   Ham, Yong Hyun ^a   Min, Nam Ki ^a   Lee, Hyun Woo ^c   Hong, Mun Pyo ^a   Kim, Kwangsoo ^d  

^a Korea University   (South Korea)

^b IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

^c Hanseo University   (South Korea)

^d Sogang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE SPECIES; ATOM FLUX; BIAS POWER; ETCH PROCESS; ETCH RATES; ETCHING CHARACTERISTICS; GAS PRESSURES; HBR/AR PLASMA; INDIUM TIN OXIDE; INDIUM TIN OXIDE FILMS; INDUCTIVELY-COUPLED; INPUT POWER; ION SURFACE INTERACTIONS; PLASMA MODEL; PLASMA PARAMETER; ZERO-DIMENSIONAL;

ATOMS; INDIUM; INDUCTIVELY COUPLED PLASMA; PHOTOLITHOGRAPHY; PLASMA DIAGNOSTICS; REACTION KINETICS; TIN; TITANIUM COMPOUNDS;

OXIDE FILMS;

EID: 73849132467     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3256226     Document Type: Article

References (22)

1. A. B. Djurisic, C. Y. Kwong, P. C. Chui, and W. K. Chan, J. Appl. Phys. 93, 5472 (2003). 10.1063/1.1565824
2. H. Kupfer, R. Kleinhempel, B. Graffel, Th. Welzel, Th. Dunger, F. Richter, W.-M. Gnehr, and T. Kopte, Surf. Coat. Technol. 201, 3964 (2006). 10.1016/j.surfcoat.2006.08.004 (Pubitemid 44783086)
3. C. H. Jeong, J. H. Lee, J. T. Lim, M. S. Kim, and G. Y. Yeom, Surf. Coat. Technol. 201, 5012 (2007). 10.1016/j.surfcoat.2006.07.099 (Pubitemid 46158581)
4. J. Y. Park, H. S. Kim, D. H. Lee, K.-H. Kwon, and G.-Y. Yeom, Surf. Coat. Technol. 131, 247 (2000). 10.1016/S0257-8972(00)00788-X (Pubitemid 32007206)
5. M. Kim, N.-K. Min, S. J. Yun, H. W. Lee, A. Efremov, and K.-H. Kwon, Microelectron. Eng. 85, 348 (2008). 10.1016/j.mee.2007.07.009
6. A. Efremov, B. G. Choi, S. Nahm, H. W. Lee, N.-K. Min, and K.-H. Kwon, J. Korean Phys. Soc. 52, 48 (2008). 10.3938/jkps.52.48
7. P. J. Chantry, J. Appl. Phys. 62, 1141 (1987). 10.1063/1.339662
8. M. A. Lieberman and A. J. Lichtenberg, Principles of Plasma Discharges and Materials Processing (J. Wiley, New York, 1994).
9. C. Lee and M. A. Lieberman, J. Vac. Sci. Technol. A 13, 368 (1995). 10.1116/1.579366
10. G. P. Kota, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A 17, 282 (1999). 10.1116/1.581582
11. B. J. Wood and H. Wise, J. Phys. Chem. 65, 1976 (1961). 10.1021/j100828a015
12. A. M. Efremov, G. H. Kim, D. I. Balashov, and C.-I. Kim, Vacuum 81, 244 (2006). 10.1016/j.vacuum.2006.03.025 (Pubitemid 44466021)
13. A. M. Efremov and V. I. Svetsov, High Temp. 44, 189 (2006). 10.1007/s10740-006-0023-1 (Pubitemid 43746114)
14. B. Chapman, Glow Discharge Processes: Sputtering and Plasma Etching (J. Wiley, New York, 1980).
15. A. Bazin, E. Pargon, X. Mellhaoui, D. Perret, B. Mortini, and O. Joubert, Proc. SPIE 6923, 692337 (2008). 10.1117/12.772573
16. E. Pargon, K. Menguelti, M. Martin, A. Bazin, O. Chaix-Pluchery, C. Sourd, S. Derrough, T. Lill, and O. Joubert, J. Appl. Phys. 105, 094902 (2009). 10.1063/1.3116504
17. D. R. Lide, Handbook of Chemistry and Physics (CRC, New York, 1998).
18. D. C. Gray, I. Tepermeister, and H. H. Sawin, J. Vac. Sci. Technol. B 11, 1243 (1993). 10.1116/1.586925
19. H. W. Winters and J. W. Coburn, Surf. Sci. Rep. 14, 162 (1992). 10.1016/0167-5729(92)90009-Z
20. C. Lee, D. B. Graves, and M. A. Lieberman, Plasma Chem. Plasma Process. 16, 99 (1996). 10.1007/BF01465219
21. W. Jin, S. A. Vitale, and H. H. Sawin, J. Vac. Sci. Technol. A 20, 2106 (2002). 10.1116/1.1517993
22. A. M. Efremov, D. P. Kim, and C.-I. Kim, IEEE Trans. Plasma Sci. 32, 1344 (2004). 10.1109/TPS.2004.828413