The parameters of plasma and the kinetics of generation and loss of active particles under conditions of discharge in HCI

High Temperature

Volumn 44, Issue 2, 2006, Pages 189-198

  Efremov, A M ^a   Svetsov, V I ^a  

^a IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DISSOCIATION; ELECTRON BEAMS; GAS DISCHARGE TUBES; GLOW DISCHARGES; KINETIC THEORY;

ATOMIC-MOLECULAR REACTIONS; DC GLOW DISCHARGE; ELECTRON IMPACT; POSITIVE ION FLUX;

PLASMAS;

EID: 33646752327     PISSN: 0018151X     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10740-006-0023-1     Document Type: Article

References (24)

1. Plazmennaya tekhnologiya v proizvodstve SBIS (Plasma Technology for VLSI), Einsprook, N. and Brown, D., Eds., Moscow: Mir, 1987 (Russ. transl.).
2. Danilin, B.S. and Kireev, V.Yu., Primenenie nizkotemperaturnoi plazmy dlya travleniya i ochistki materialov (The Use of Low-Temperature Plasma for Etching and Cleaning of Materials), Moscow: Energoatomizdat, 1987.
3. Orlikovskii, A.A. and Slovetskii, D.I., Mikroelektronika, 1987, vol. 16, no. 6, p. 497.
4. Wolf, S. and Tauber, R.N., Silicon Processing for the VLSI Era. Vol. 1. Process Technology, New York: Lattice Press, 2000.
5. Sugano, T., Applications of Plasma Processes to VLSI Technology, New York: Wiley, 1990.
6. Rooth, J.R., Industrial Plasma Engineering, Philadelphia: IOP Publ., 1995.
7. th Int. Colloquium on Plasma Processes, 1999, Antibes, p. 110.
8. th Meeting of the Electrochemical Society, 2000, Toronto, p. 301.
9. Roosmalen, A.J., Baggerman, J.A.G., and Brader, S.J., Dry Etching for VLSI, New York: Plenum Press, 1991.
10. Lee, Y.T., Lieberman, M.A., Lichtenberg, A.J., Boseand, F., Baltes, H., and Patrick, R., J. Vac. Sci. Technol. A, 1997, vol, 15, p. 113.
11. Lee, C. and Lieberman, M.A., J. Vac. Sci. Technol. A, 1995, vol. 13, p. 368.
12. Morgan, W.L., Plasma Chem. Plasma Proc., 1992, vol. 12, p. 449.
13. Kupriyanovskaya, A.P., Rybkin, V.V., Sokolova, Yu.A., and Trostin, A.N., Kompilyatsiya dannykh po secheniyani elementarnykh protsessov dlya raschetov koeffitsientov skorostei protsessov v neravnovesnykh sistemakh (Compilation of Data on the Cross Sections of Elementary Processes for the Calculation of the Coefficients of Rates of Processes in Non-equilibrium Systems), Available from VINITI, 1990, Cherkasy, no. 921-V90.
14. Efremov, A.M., Svetsov, V.I., and Balashov, D.I., Contrib. Plasma Phys., 1999, vol. 39, p. 247.
15. Turner, M.M. and Smith, P.W., IEEE Trans. Plasma Sci., 1991. vol. 19, p. 350.
16. Sommerer, T.J. and Kushner, M.J., J. Vac. Sci. Technol. B, 1992, vol. 10, p. 179.
17. Denisov, E.T., Kinetika gomogennykh khimicheskikh reaktsii (The Kinetics of Homogeneous Chemical Reactions), Moscow: Vysshaya Shkola, 1988.
18. Emanuel', N.M. and Knorre, D.G., Kurs khimicheskoi kinetiki (A Course of Chemical Kinetics), Moscow: Vysshaya Shkola, 1974.
19. Kondrat'ev, V.N., Komtanty skorostei gazofaznykh reaktsii (Rate Constants of Gas-Phase Reactions), Moscow: Nauka, 1971.
20. Efremov, A.M., Kim, D.P., and Kim, C.I., Thin Solid Films, 2003, vol. 435, p. 83.
21. Efremov, A.M. and Svetsov, V.I., Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol., 2004, vol. 47, no. 2, p. 104.
22. Brovikova, I.N., Galiaskarov, E.G., Rybkin, V.V., and Bessarab, A.B., Teplofiz. Vys. Temp., 1998, vol. 35, no. 5, p. 706
23. (High Temp. (Engl. transl.), vol. 35, no. 5, p. 681).
24. Fizicheskie velichiny (Physical Quantities), Grigor'ev, I.S. and Meilikhov, E.Z., Eds., Moscow: Energoatomizdat, 1991.