Simulation of gate tunneling current in metal-insulator-metal capacitor with multi layer high-K dielectric stack using the non-equilibrium Green's function formalism

Japanese Journal of Applied Physics

Volumn 48, Issue 11, 2009, Pages

  Moreau, Mathieu ^a   Munteanu, Daniela ^a   Autran, Jean Luc ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BRILLOUIN; CLASSICAL APPROXIMATION; CONDUCTION BAND OFFSET; DIELECTRIC CONSTANTS; DOUBLE LAYERS; EFFECTIVE MASS; GATE STACKS; GATE TUNNELING CURRENTS; GATE-LEAKAGE CURRENT; HIGH-K DIELECTRIC; HIGH-K GATE DIELECTRICS; INTERFACIAL OXIDES; LAYER THICKNESS; MATERIAL PROPERTY; METAL-INSULATOR-METAL CAPACITORS; NON-EQUILIBRIUM GREEN'S FUNCTION; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; OXIDE THICKNESS; QUANTUM MECHANICAL; QUANTUM SIMULATIONS; SIMULATION CODE; SIMULATION STUDIES; TUNNELING CURRENT; TUNNELING TRANSMISSION;

CAPACITANCE; CAPACITORS; CONDUCTION BANDS; ELECTRON MOBILITY; ELECTRON TUNNELING; GATE DIELECTRICS; GATES (TRANSISTOR); GREEN'S FUNCTION; HETEROJUNCTIONS; LEAKAGE CURRENTS; LOGIC GATES; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; PERMITTIVITY; PROBABILITY; QUANTUM CHEMISTRY; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON COMPOUNDS; TUNNELING (EXCAVATION); WIND TUNNELS;

DIELECTRIC MATERIALS;

EID: 73849117228     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.111409     Document Type: Article

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