Gate current modeling of high-k stack nanoscale MOSFETs

Solid-State Electronics

Volumn 50, Issue 9-10, 2006, Pages 1489-1494

  Wang, Wei ^a,b   Gu, Ning ^a   Sun, J P ^c   Mazumder, P ^c  

^a SOUTHEAST UNIVERSITY   (China)

^b NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

High k structures; Nanoscale MOSFETs

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; GATES (TRANSISTOR); POISSON EQUATION;

GATE CURRENT; HIGH-K STRUCTURES; NANOSCALE MOSFET;

MOSFET DEVICES;

EID: 33750309569     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.08.004     Document Type: Article

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