A simulation analysis of FIBL in decananometer Double-Gate MOSFETs with high-κ gate dielectrics

Journal of Non-Crystalline Solids

Volumn 351, Issue 21-23, 2005, Pages 1897-1901

  Autran, J L ^a,b   Munteanu, D ^a   Bescond, M ^a   Houssa, M ^c   Said, A ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b INSTITUT UNIVERSITAIRE DE FRANCE   (France)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTROSTATICS; PARAMETER ESTIMATION; QUANTUM THEORY;

DECANANOMETER; GATE DIELECTRICS; INTERFACIAL OXIDE LAYERS; QUANTUM MECHANICAL SIMULATION;

MOSFET DEVICES;

EID: 21144456725     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.04.034     Document Type: Conference Paper

References (8)

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6. G. Yeap, S. Krishnan, and M. Lin Electron. Lett. 34 2003 1150
7. ITRS 2003, available at http://public.itrs.net.
8. D. Munteanu, and J.L. Autran Solid-State Electron 47 2003 1219