Giant stability enhancement of rare-earth implanted Si O2 light emitting devices by an additional SiON protection layer

Applied Physics Letters

Volumn 92, Issue 7, 2008, Pages

  Sun, J M ^a,b   Rebohle, L ^a   Prucnal, S ^a   Helm, M ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b NANKAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELDS; LIGHT EMISSION; OPTOELECTRONIC DEVICES;

DEVICE STRUCTURE; GIANT STABILITY ENHANCEMENT;

SILICA;

EID: 39749175851     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2870203     Document Type: Article

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