Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 551-555

  Kuroda, Naotaka ^a   Sasaoka, Chiaki ^a   Kimura, Akitaka ^a   Usui, Akira ^a   Mochizuki, Yasunori ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Dislocation; EBIC; GaN; Hydride vapor phase epitaxy; Mg impurity; Minority carrier diffusion length; SIMS

Indexed keywords

CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); MAGNESIUM; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SUBSTRATES; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTOR JUNCTIONS;

EID: 0032090699     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00191-2     Document Type: Article

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