Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD

Microelectronics Journal

Volumn 37, Issue 7, 2006, Pages 583-585

  Ran, Junxue ^a   Wang, Xiaoliang ^a   Hu, Guoxin ^a   Wang, Junxi ^a   Li, Jianping ^a   Wang, Cuimei ^a   Zeng, Yiping ^a   Li, Jinmin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

AlGaN GaN HBTs; GaN; Mg memory effect; MOCVD; Redistribution

Indexed keywords

GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; THIN FILMS;

ALGAN/GAN HBTS; EMITTER-BASE JUNCTION; MG MEMORY EFFECT; REDISTRIBUTION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33646233780     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.10.001     Document Type: Article

References (8)

1. Limb J.B., McCarthy L., Kozodoy P., Xing H., Ibbetson J., Smorchkova Y., DenBaars S.P., and Mishra U.K. Electron. Lett. 36 (1999) 1971
2. Ren F., Han J., Hickman R., Van Hove J.M., Chow P.P., Klaassen J.J., LaRoche J.R., Jung K.B., Cho H., Cao X.A., Donovan S.M., Kopf R.F., Wilson R.G., Baca A.G., Shul R.J., Zhang L., Willison C.G., Abernathy C.R., and Pearton S.J. Solid-State Electron. 44 (2000) 239
3. Huang J.J., Hattendorf M., Feng M., Lambert D.J.H., Shelton B.S., Wong M.M., Chowdhury U., Zhu T.G., Kwon H.K., and Dupuis D. Electron. Lett. 36 (2000) 1239
4. McCarthy L.S., Smorchkova I.P., Huili X., Kozodoy P., Fini P., Limb J., Pulfrey D.L., Speck J.S., Rodwell M.J.W., DenBaars S.P., and Mishra U.K. IEEE Trans. Electron Dev. 48 (2001) 543
5. Ohba Y., and Hatano A. J. Cryst. Growth. 145 (1994) 214
6. Shelton B.S., Lambert D.J.H., Huang J.J., Wong M.M., Chowdhury U., Zhu T.G., Kwon H.K., Liliental-Weber Z., Benarama M., Feng M., and Dupuis R.D. IEEE Trans. Electron Dev. 48 (2001) 490
7. Xing H., Green D.S., Yu H., Mates T., Kozodoy P., Keller S., Denbaars S.P., and Mishra U.K. Jpn. J. Appl. Phys. 42 (2003) 50
8. Han J., Baca A.G., Shul R.J., Willison C.G., Zhang L., Ren F., Zhang A.P., Dang G.T., Donovan S.M., Cao X.A., Cho H., Jung K.B., Abernathy C.R., Pearton S.J., and Wilson R.G. Appl. Phys. Lett. 74 (1999) 2702