Recent progress of high power GaN-based violet laser diodes

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2278-2282

  Nam, O H ^a   Ha, K H ^a   Kwak, J S ^a   Lee, S N ^a   Choi, K K ^a   Chang, T H ^a   Chae, S H ^a   Lee, W S ^a   Sung, Y J ^a   Paek, H S ^a   Chae, J H ^a   Sakong, T ^a   Park, Y ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; HIGH PERFORMANCE LASERS; LOW THRESHOLD VOLTAGE; OPERATION VOLTAGE; POWER CONTROLLED; SAPPHIRE SUBSTRATES; THRESHOLD CURRENTS; VIOLET LASER DIODES;

SAPPHIRE; THRESHOLD VOLTAGE;

GALLIUM NITRIDE;

EID: 84875088428     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303334     Document Type: Conference Paper

References (5)

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