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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 455-459

Investigation of optical and electrical properties of Mg-doped p-In xGa1-xN, p-GaN and p-AlyGa1-yN grown by MOCVD

(10) Lee, Sung Nam a,b Son, Joongkon a Sakong, Tan a Lee, Wonseok a Paek, Hosun a Yoon, Euijoon b Kim, Jiyoung c Cho, Yong Hoon c Nam, Okhyun a Park, Yongjo a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Seoul National University (South Korea)

c Chungbuk National University (South Korea)

Author keywords

A1. Doping; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

ACTIVATION ENERGY; ELECTRIC PROPERTIES; GALLIUM NITRIDE; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS;

HALL MEASUREMENTS; IMPURITY TRANSITION; TRIMETHYLALUMINIUM (TMAL); TRIMETHYLGALLIUM (TMGA);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 9944229889 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.09.013 Document Type: Conference Paper

Times cited : (37)

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