Performance of high-reliability and high-linearity InGaP/GaAs HBT PAs for wireless communication

IEEE Transactions on Electron Devices

Volumn 57, Issue 1, 2010, Pages 188-194

  Tu, Min Chang ^a   Ueng, Herng Yih ^a   Wang, Yu Chi ^b  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b WIN SEMICONDUCTORS CORP   (Taiwan)

Author keywords

Adjacent channel power ratio (ACPR); Collectorbase capacitance; Epitaxial; Heterojunction bipolar transistor (HBT)

Indexed keywords

ADJACENT CHANNEL POWER RATIO; AMBIENT TEMPERATURES; BETA DEGRADATION; CAPACITANCE RATIO; COLLECTOR-BASE CAPACITANCE; DIGITAL MOBILE COMMUNICATION; HIGH RELIABILITY; INGAP/GAAS HBT; OVERSTRESSES; RELIABILITY TESTING; SILVACO; WAFER LEVEL; WIRELESS COMMUNICATIONS;

BIPOLAR TRANSISTORS; CAPACITANCE; COMMUNICATION SYSTEMS; COMPUTER SOFTWARE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; MOBILE COMPUTING; POWER AMPLIFIERS; RADIO BROADCASTING; RELIABILITY;

LINEARIZATION;

EID: 73349127103     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2035543     Document Type: Article

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