Intermodulation Mechanism and Linearization of AlGaAs/GaAs HBT's

IEEE Transactions on Microwave Theory and Techniques

Volumn 45, Issue 12 PART 1, 1997, Pages 2065-2072

  Lee, Joonwoo ^a   Kim, Woonyun ^b   Kim, Youngsik ^a   Rho, Laemoon ^c   Kim, Bumman ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

Heterojunction bipolar transistors; Intermodulation distortion; Nonlinear distortion; Semiconductor device modeling; Volterra series

Indexed keywords

ELECTRIC CURRENTS; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

NONLINEAR DISTORTION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031375058     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.643701     Document Type: Article

References (19)

1. B. L. Nelson et al., "High-linearity, low de power GaAs HBT broadband amplifiers to 11 GHz," in 1989 IEEE GaAs 1C Symp. Dig., San Diego, CA, Oct. 1989, pp. 79-82.
2. M. E. Kim et al., "12-40 GHz low harmonic distortion and phase noise performance of GaAs HBT's," in 1988 IEEE GaAs 1C Symp. Dig., Nashville, TO, Nov. 1988, pp. 117-120.
3. P. K. Ikalainen, S.-K. Fan, and M. A. Khatibzadeh, "20 W linear, high efficiency internally matched HBT at 7.5 GHz," in IEEE MTT Symp. Dig., San Diego, CA, May 1994, pp. 679-682
4. T. Yoshimasu, N. Tanba, and S. Hara, "High efficiency HBT MMIC linear power amplifier for L-band personal communications systems," IEEE Microwave Guided Wave Lett., vol. 4, pp. 65-67, Mar. 1994.
5. K. W. Kobayashi, A. K. Oki, L. T. Tran, and D. C. Streit, "Ultra-low dc power GaAs HBT 5-band low noise amplifiers," in IEEE Microwave Millimeter-Wave Monolithic Circuits Symp. Dig., Orlando, FL, May 1995, pp 73-76.
6. S. A. Maas, B. L. Nelson, and D. L. Tait, "Intermodulation in HBT's," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 442-148, Mar. 1992.
7. A. Samelis and D. Pavlidis, "Mechanisms determining third-order inter-modulation distortion in AlGaAs/GaAs HBT's," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 2374-2380, Dec. 1992.
8. N. L. Wang, W. J. Ho, and J. A. Higgins, "AlGaAs/GaAs HBT linearity characteristics," IEEE Trans. Microwave Theory Tech., vol. 42, pp. 1845-1850, Oct. 1994.
9. S. Narayanan, "Transistor distortion analysis using Volterra-series representation," Bell Syst. Tech. J., vol. 46, pp. 991-1024, May-June 1967.
10. A. A. Saleh, "Matrix analysis of mildly nonlinear, multiple-input, multiple-output systems with memory," Bell Syst. Tech. J., vol. 60, pp. 2221-2243, Nov. 1982.
11. S. Narayanan and H. C. Poon, "An analysis of distortion in bipolar transistors using integral charge control model and Volterra-series," IEEE Trans. Circuit Theory, vol. CT-20, pp. 341-351, Apr. 1973.
12. H. C. Poon, "Implication of transistor frequency dependence on intermodulation distortion," IEEE Trans. Electron Devices, vol. ED-21, pp. 110-112, Jan. 1974.
13. B. R. Ryum and I. M. Abdel-Motaleb, "A Gummel-Poon model for abrupt and graded HBT's," Solid State Electron., vol. 33, no. 7, pp. 869-880, July 1992.
14. H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers. New York: Academic, 1978.
15. A. A. Grinberg, M. S. Shur, R. J. Fischer, and H. Morkoc, "An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs HBT's," IEEE Trans. Electron Devices, vol. ED-31, pp. 1758-1765, Dec. 1984.
16. H.-H. Lin and S.-C. Lee, "Super-gain AlGaAs/GaAs HBT's using an emitter edge-thinning design," Appl. Phys. Lett., vol. 47, no. 8, pp. 839-841, Oct. 1985.
17. J. J. Liou, F. A. Lindholm, and D. C. Malocha, "Forward-voltage capacitance of heterojunction space-charge regions," J. Appl. Phys., vol. 63, no. 10, pp. 5015-5022, May 1988.
18. N. Chand and H. Morkoc, "Doping effects and compositional grading in Al-Gai-zAs/GaAs HBT s," IEEE Trans. Electron Devices, vol. ED-32, pp. 1064-1069, June 1985.
19. J. Lee, Y. Suh, J. Shin, B. Kim, Y. L. Jung, H. C. Seo, W. Jung, and D. S. Ma, "Experimental study of emitter size effects of microwave AlGaAs/GaAs HBT's," in Proc. 1CVC'95, Seoul, Korea, Oct. 1995, pp. 361-363.