A 44-GHz-High IP3 InP HBT MMIC Amplifier for Low DC Power Millimeter-Wave Receiver Applications

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 9, 1999, Pages 1188-1195

  Kobayashi, Kevin W ^a,c,d   Cowles, John C ^a,b,e   Tran, Liem T ^a,f   Gutierrez Aitken, Augusto ^a,e,g   Nishimoto, Matt ^a,h   Elliott, Jeffrey H ^a,i   Block, Thomas R ^a,j   Oki, Aaron K ^a,k   Streit, Dwight C ^a,i  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b ANALOG DEVICES INC   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^e UNIVERSITY OF MICHIGAN   (United States)

^f CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^g EMI University   (Bolivia)

^h UNIVERSITY OF HAWAII   (United States)

ⁱ UNIVERSITY OF CALIFORNIA   (United States)

^j UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^k UNIVERSITY OF CALIFORNIA   (United States)

more..

Author keywords

Heterojunction bipolar transistor (HBT); InP; IP3; Linearity; Monolithic microwave integrated circuit (MMIC) amplifier

Indexed keywords

EID: 0001316140     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.782075     Document Type: Article

References (9)

1. K. W. Kobayashi, M. Nishimoto, L. T. Tran, H. Wang, J. Cowles, T. R. Block, J. Elliott, B. Allen, A. K. Oki, and D. C. Streit, "A 44 GHz high IP3 InP-HBT amplifier with practical current re-use biasing," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 2541-2552, Dec. 1998.
2. P. K. Ikalainen, L. C. Witkowski, and K. R. Varian, "Low-noise, low DC power linear amplifiers," in 1993 IEEE MMWMC Symp., Atlanta, GA, pp. 159-162.
3. S. L. G. Chu, J. C. Huang, A. Bertrand, M. J. Schindler, W. Struble, R. Binder, and W. Hoke, "High linearity monolithic broadband pseudomorphic spiked-doped MESFET amplifiers," in 1992 IEEE GaAs IC Symp., pp. 211-214.
4. B. L. Nelson, D. K. Umemoto, C. B. Perry, R. Dixit, B. R. Allen, M. E. Kim, and A. K. Oki, "High-linearity, low DC power monolithic GaAs HBT broadband amplifiers to 11 GHz," in 1990 IEEE MMWMC Symp., Dallas, TX, pp. 15-18.
5. K. W. Kobayashi, A. K. Oki, L. T. Tran, and D. C. Streit, "Ultra-low dc power GaAs HBT S- and C-band low noise amplifiers for portable wireless applications," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 3055-3061, Dec. 1995.
6. Y. Kwon, W.-J. Ho, and J. A. Higgins, "A Q-band monolithic linear amplifier using AlGaAs/GaAs HBT's," IEEE Microwave Guided Wave Lett., vol. 6, pp. 180-182, Apr. 1996.
7. K. W. Kobayashi, A. K. Oki, J. Cowles, L. T. Tran, P. C. Grossman, T. R. Block, and D. C. Streit, "The voltage-dependent IP3 performance of a 35-GHz InAlAs/InGaAs-InP HBT amplifier," IEEE Microwave Guided Wave Lett., vol. 7, pp. 66-68, Mar. 1997.
8. S. A. Maas, B. L. Nelson, and D. L. Tait, "Intermodulation in heterojunction bipolar transistors," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 442-448, Mar. 1992.
9. J. Lee, W. Kim, Y. Kim, T. Rho, and B. Kim, "Intermodulation mechanism and linearization of AlGaAs/GaAs HBT's," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 2065-2072, Dec. 1997.