High Linearity InGaP/GaAs Power HBTs by Collector Design

IEEE Electron Device Letters

Volumn 25, Issue 2, 2004, Pages 58-60

  Wang, Che Ming ^a   Hsu, Hung Tsao ^a   Shu, Hsiu Chuan ^a   Hsin, Yue Ming ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Heterojunction bipolor transistor (HBT); Inter modulation; Linearity

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; ELECTRIC CONTACTS; ELECTRIC LOADS; ELECTRON BEAMS; ETCHING; EVAPORATION; INTERMODULATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

GUMMEL PLOTS; POWER LINEARITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1342308182     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.822654     Document Type: Article

References (7)

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